Thermal management strategies for gallium oxide vertical trench-fin MOSFETs

Trench-fin MOSFETs, with their near-surface heat generation and the higher-surface area afforded by geometry for thermal management, represent a promising solution to problems frequently encountered in lateral β-Ga2O3 devices. Here, we investigate potential thermal-management strategies vertical trench-fin MOSFET through parametric analysis, offering recommendations on how best design device maximal current density excellent performance. Primarily, using thermally conductive dielectric over structure, significant improvements power may be achieved, aided spreading. Additionally, find that bonding spreaders its topside can yield